DG641 datasheet(2/18 Pages) VISHAY

2 / 18 page

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Document Number: 70058

S11-0154-Rev. F, 31-Jan-11

Vishay Siliconix

DG641, DG642, DG643

Notes:

a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC board.

c. Derate 7.6 mW/°C above 75 °C.

d. Derate 6 mW/°C above 75 °C.

e. Derate 80 mW/°C above 75 °C.

SCHEMATIC DIAGRAM (Typical Channel)

ORDERING INFORMATION

Temp. Range

Package

Part Number

DG641

- 40 °C to 85 °C

16-Pin Plastic DIP

DG641DJ

16-Pin Narrow SOIC

DG641DY

DG642

- 40 °C to 85 °C

8-Pin Plastic DIP

DG642DJ

8-Pin Narrow SOIC

DG642DY

DG643

- 40 °C to 85 °C

16-Pin Plastic DIP

DG643DJ

16-Pin Narrow SOIC

DG643DY

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V+ to V-

- 0.3 to 21

V+ to GND

- 0.3 to 21

V- to GND

- 19 to + 0.3

Digital Inputs

(V-) - 0.3 V to (V+) + 0.3 V

or 20 mA, whichever occurs first

VS, VD

(V-) - 0.3 V to (V+) + 14 V

or 20 mA, whichever occurs first

Continuous Current (Any terminal except S or D)

Continuous Current S or D

DG641, DG643

DG642

100

Current, S or D

(Pulsed at 1 ms, 10 % duty cycle max)

DG641, DG643

200

DG642

300

Storage Temperature

- 65 to 125

°C

Power Dissipation (Package)b

8-Pin Plastic DIP and Narrow SOICc

300

16-Pin Plastic DIPd

470

16-Pin Narrow SOICe

600

Figure 1.

V+

V-

5 V

Reg

GND

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