INA128

INA129

SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005

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4

ELECTRICAL CHARACTERISTICS (continued)

INA128PA, UA

INA129PA, UA

INA128P, U

INA129P. U

PARAMETER

UNIT

MAX

TYP

MIN

MAX

TYP

MIN

CONDITIONS

OUTPUT

Voltage: Positive

(V+) − 1.4

(V+) − 0.9

∗

∗

V

(V−) + 1.4

(V−) + 0.8

∗

∗

V

Load Capacitance Stability

1000

∗

pF

Short-Circuit Current

+6/−15

∗

mA

FREQUENCY RESPONSE

Bandwidth, −3dB

G = 1

1.3

∗

MHz

G = 10

700

∗

kHz

G = 100

200

∗

kHz

G = 1000

20

∗

kHz

Slew Rate

4

∗

V/

µs

Settling Time, 0.01%

G = 1

7

∗

µs

G = 10

7

∗

µs

G = 100

9

∗

µs

G = 1000

80

∗

µs

Overload Recovery

50% Overdrive

4

∗

µs

POWER SUPPLY

Voltage Range

±2.25

±15

±18

∗

∗

∗

V

Current, Total

±700

±750

∗

∗

µA

TEMPERATURE RANGE

Specification

−40

+85

∗

∗

°C

Operating

−40

+125

∗

∗

°C

8-Pin DIP

80

∗

°C/W

SO-8 SOIC

150

∗

°C/W

NOTE:

∗ Specification is same as INA128P, U or INA129P, U.

(1) Input common-mode range varies with output voltage — see typical curves.

(2) Specified by wafer test.

(3) Temperature coefficient of the 50kΩ (or 49.4kΩ) term in the gain equation.

(4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.