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BTS307 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BTS307 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
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8 / 13 page ![]() BTS 307 Semiconductor Group 8 Vbb disconnect with charged external inductive load PROFET V IN ST OUT GND bb 1 2 4 3 5 V bb high S D If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation PROFET V IN ST OUT GND bb = E E E E AS bb L R ELoad L RL { Z L Energy stored in load inductance: EL = 1/2·L·I 2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L 2·RL · (Vbb + |VOUT(CL)|)· ln (1+ IL·RL |VOUT(CL)| ) |
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