BTS307 datasheet(9/13 Pages) SIEMENS

9 / 13 page

BTS 307

Semiconductor Group

Options Overview

all versions: High-side switch, Input protection, ESD protectionand reverse battery

protection with 150

Ω in GND connection, protection against loss of ground

Type

BTS 410D2 410E2 410G2 410H2

307

308

Logic version

Overtemperature protection with hysteresis

Tj >150 °C, latch function9)10)

Tj >150 °C, with auto-restart on cooling

Short circuit to GND protection

switches off when

VON>3.5 V typ. and Vbb> 8 V

typ9) (when first turned on after approx. 150

µs)

switches off when

VON>8.5 V typ.9)

(when first turned on after approx. 150

µs)

Achieved through overtemperature protection

Open load detection

in OFF-state with sensing current 6

µA typ.

in ON-state with sensing voltage drop across

power transistor

Undervoltage shutdown with auto restart

Overvoltage shutdown with auto restart

Status feedback for

overtemperature

short circuit to GND

short to Vbb

open load

undervoltage

overvoltage

-11)

Status output type

CMOS

Open drain

Output negative voltage transient limit

(fast inductive load switch off)

Vbb - VON(CL)

Load current limit

high level (can handle loads with high inrush currents)

low level (better protection of application)

Protection against loss of GND

)

Latch except when

Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠

0 V only if forced externally). So the device remains latched unless

Vbb < VON(SC) (see page 4). No latch

between turn on and td(SC).

10) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage

) Low resistance short V

bb to output may be detected in ON-state by the no-load-detection

BTS307 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

BTS307 Datasheet(HTML) 9 Page - Siemens Semiconductor Group

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