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ADP5061 Datasheet(PDF) 3 Page - Analog Devices |
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ADP5061 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 44 page  Data Sheet ADP5061 Rev. 0 | Page 3 of 44 SPECIFICATIONS −40°C < TJ < +125°C, VVIN = 5.0 V, VHOT < VTHR < VCOLD, VBAT_SNS = 3.6 V, VISO_B = VBAT_SNS, CVIN = 10 µF, CISO_S = 22 µF, CISO_B = 22 µF, CCBP = 10 nF, all registers at default values, unless otherwise noted. Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments GENERAL PARAMETERS Undervoltage Lockout VUVLO 2.25 2.35 2.5 V Falling threshold, higher of VVIN and VBAT_SNS1 Hysteresis 50 100 150 mV Hysteresis, higher of VVIN and VBAT_SNS rising1 Total Input Current ILIM 74 92 100 mA Nominal USB initialized current level2 114 150 mA USB super speed 300 mA USB enumerated current level (specification for China) 425 470 500 mA USB enumerated current level 900 mA Dedicated charger input 1500 mA Dedicated wall charger VINx Current Consumption IQVIN 2 mA Charging or LDO mode IQVIN_DIS 280 450 µA DIS_IC1 = high, VISO_B < VINx < 5.5 V Battery Current Consumption IQBATT 20 µA LDO mode, VISO_S > VBAT_SNS 5 µA Standby, includes ISO_Sx pin leakage, VVIN = 0 V, TJ = −40°C to +85°C 0.5 0.9 mA Standby, battery monitor active CHARGER Fast Charge Current CC Mode ICHG 715 750 775 mA VISO_B = 3.9 V; fast charge current accuracy is guaranteed at temperatures from TJ = −40°C to isothermal regulation limit (typically TJ = +115°C)2, 3 Fast Charge Current Accuracy −40 +30 mA ICHG = 50 mA to 550 mA −50 +30 mA ICHG = 600 mA to 950 mA −65 +35 mA ICHG = 1000 mA to 1300 mA Trickle Charge Current2 ITRK_DEAD 16 20 25 mA Weak Charge Current2, 3 ICHG_WEAK ITRK_DEAD + ICHG mA Trickle to Weak Charge Threshold Dead Battery VTRK_DEAD 2.4 2.5 2.6 V VTRK_DEAD < VBAT_SNS < VWEAK2, 4 Hysteresis ΔVTRK_DEAD 100 mV On BAT_SNS2 Weak Battery Threshold Weak to Fast Charge Threshold VWEAK 2.89 3.0 3.11 V On BAT_SNS2, 4 ΔVWEAK 100 mV Battery Termination Voltage VTRM 4.200 V Termination Voltage Accuracy −0.25 +0.25 % On BAT_SNS, TJ = 25°C, IEND = 52.5 mA2 −0.96 +0.89 % TJ = 0°C to 115°C2 −1.15 +1.20 % TJ = −40°C to +125°C Battery Overvoltage Threshold VBATOV VIN − 0.075 V Relative to VINx voltage, BAT_SNS rising Charge Complete Current IEND 15 52.5 98 mA VBAT_SNS = VTRM Charging Complete Current Threshold Accuracy 17 83 mA IEND = 52.5 mA, TJ = 0°C to 115°C2 59 123 IEND = 92.5 mA, TJ = 0°C to 115°C Recharge Voltage Differential VRCH 160 260 390 mV Relative to VTRM, BAT_SNS falling2 Battery Node Short Threshold Voltage2 VBAT_SHR 2.2 2.4 2.5 V Battery Short Detection Current ITRK_SHORT 20 mA ITRK_SHORT = ITRK_DEAD2 Charging Start Voltage Limit VCHG_VLIM 3.6 3.7 3.8 V Voltage limit is not active by default Charging Soft Start Current ICHG_START 185 260 365 mA VBAT_SNS > VTRK_DEAD Charging Soft Start Timer tCHG_START 3 ms BATTERY ISOLATION FET Bump to Bump Resistance Between ISO_Sx and ISO_Bx RDSONISO 30 49 mΩ On battery supplement mode, VINx = 0 V, VISO_B = 4.2 V, IISO_B = 500 mA Regulated System Voltage: VBAT Low VISO_SFC 3.6 3.8 4.0 V VTRM[5:0] programming ≥ 4.00 V 3.3 3.5 3.7 VTRM[5:0] programming < 4.00 V Battery Supplementary Threshold VTHISO 0 5 12 mV VISO_S < VISO_B, VSYS rising |
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