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DRDC3105 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DRDC3105
Description  INTEGRATED RELAY, INDUCTIVE LOAD DRIVER
PDF  9 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DRDC3105 Datasheet(HTML) 3 Page - Diodes Incorporated

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DRDC3105
Document number: DS35213 Rev. 3 - 2
3 of 9
www.diodes.com
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DRDC3105
 
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Output Zener Breakdown Voltage
BV(out)
BV(−out)
6.2
-
6.6
0.67
7.0
-
V
@ IT = 10 mA Pulse
Output Leakage Current @ 0 Input Voltage
IOO
-
-
-
-
0.1
30
µA
VO = 5.5 V, TA = 25°C
VO = 5.5 V, TA = 85°C
“ON” state input voltage (Note 12)
Vin(on)
0.99
1.5
V
IO =100 mA, VO = 150mV
“OFF” State Input Voltage (Note 13)
Vin(off)
400
540
-
mV
IO =100 µA, VO = 4.9V
ON CHARACTERISTICS
Input Bias Current (HFE Limited)
Iin
-
0.7
1.6
mA
IO = 250 mA, VO = 0.25 V
Output Saturation Voltage
VO(sat)
-
125
160
mV
IO = 250 mA, Iin = 1.5 mA
Output Sink Current – Continuous
IO(on)
250
430
-
mA
VCE = 0.25 V, Iin = 1.5 mA
SWITCHING CHARACTERISTICS (Refer to Figure 1)
Propagation Delay Times:
High to Low Propagation Delay; (5.0V 74HC04)
Low to High Propagation Delay; (5.0V 74HC04)
tPHL
tPLH
-
20.4
1.43
-
ns
µs
-
High to Low Propagation Delay; 13 (3.0V 74HC04)
Low to High Propagation Delay; 13 (3.0V 74HC04)
tPHL
tPLH
-
32.2
760
-
ns
ns
-
High to Low Propagation Delay; 14 (5.0V 74LS04)
Low to High Propagation Delay; 14 (5.0V 74LS04)
tPHL
tPLH
-
25.3
2.57
-
ns
µs
-
Transition Times:
Fall Time; (5.0V 74HC04)
Rise Time; (5.0V 74HC04)
tf
tr
-
12.5
411
-
ns
ns
-
Fall Time; 13 (3.0V 74HC04)
Rise Time; 13 (3.0V 74HC04)
tf
tr
-
21.1
220
-
ns
ns
-
Fall Time; 14 (5.0V 74LS04)
Rise Time; 14 (5.0V 74LS04)
tf
tr
-
15.1
849
-
ns
ns
-
Notes:
12. The device is guaranteed to be in “ON” state with Vin(on) above 1.5V
13. The device is guaranteed to be in “OFF” state with Vin(off) below 400mV



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