Top View

Clearance area.

Keep free of any

conductive materials.

Device

LEGEND

Top layer; copper pour and traces

High-side area

Controller-side area

Via

To Shunt

To Filter or ADC

VDD1

VINP

GND1

VINN

VDD2

VOUTP

VOUTN

GND2

0.1mF

SMD

1206

0.1 F

SMD

1206

m

0.1 F

SMD

1206

m

330 pF

SMD

0603

12

SMD 0603

W

12

SMD 0603

W

AMC1100

www.ti.com

SBAS562 – APRIL 2012

As shown in Figure 33, it is recommended to place the bypass and filter capacitors as close as possible to the AMC1100 to ensure best performance.

Figure 33. AMC1100 Layout Recommendation

To maintain the isolation barrier and the common-mode transient immunity (CMTI) of the device, the distance between the high-side ground (GND1) and

the low-side ground (GND2) should be kept at maximum; that is the entire area underneath the device should be kept free of any conducting materials.

Copyright © 2012, Texas Instruments Incorporated

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Product Folder Link(s): AMC1100