SST38VF166 datasheet(16/50 Pages) SST

16 / 50 page

Data Sheet

16 Megabit FlashBank Memory

SST38VF166

327-3 2/01

S71065

TABLE 18: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Write Operation

100

µs

T18.1 327

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 19: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T19.1 327

TABLE 20: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units

Test Method

NEND1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Endurance - Flash Bank

Endurance - E2 Bank

10,000

100,000

Cycles/Sector

Cycles/Word

JEDEC Standard A117

TDR1

Data Retention

100

Years

JEDEC Standard A103

VZAP_HBM1

ESD Susceptibility

Human Body Model

2000

Volts

JEDEC Standard A114

VZAP_MM1

ESD Susceptibility

Machine Model

200

Volts

JEDEC Standard A115

ILTH1

Latch Up

100 + IDD

JEDEC Standard 78

T20.0 327

SST38VF166 Datasheet(PDF) 16 Page - Silicon Storage Technology, Inc

SST38VF166 Datasheet(HTML) 16 Page - Silicon Storage Technology, Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

Datasheet Download

Link URL