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CYUSB301X Datasheet(PDF) 23 Page - Cypress Semiconductor

Part # CYUSB301X
Description  EZ-USB짰 FX3 SuperSpeed USB Controller
PDF  40 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CYUSB301X Datasheet(HTML) 23 Page - Cypress Semiconductor

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CYUSB301X
Document Number: 001-52136 Rev. *L
Page 23 of 40
Note
5. All parameters guaranteed by design and validated through characterization.
Table 11. GPIF II Timing in Asynchronous Mode[5]
Note The following parameters assume one state transition
Parameter
Description
Min
Max
Units
tDS
Data In to DLE setup time. Valid in DDR async mode.
2.3
–
ns
tDH
Data In to DLE hold time. Valid in DDR async mode.
2
–
ns
tAS
Address In to ALE setup time
2.3
–
ns
tAH
Address In to ALE hold time
2
–
ns
tCTLassert
CTL I/O asserted width for CTRL inputs without DQ input
association and for outputs.
7–
ns
tCTLdeassert
CTL I/O deasserted width for CTRL inputs without DQ
input association and for outputs.
7–
ns
tCTLassert_DQassert
CTL asserted pulse width for CTL inputs that signify DQ
inputs valid at the asserting edge but do not employ
in-built latches (ALE/DLE) for those DQ inputs.
20
–
ns
tCTLdeassert_DQassert
CTL deasserted pulse width for CTL inputs that signify DQ
input valid at the asserting edge but do not employ in-built
latches (ALE/DLE) for those DQ inputs.
7–
ns
tCTLassert_DQdeassert
CTL asserted pulse width for CTL inputs that signify DQ
inputs valid at the deasserting edge but do not employ
in-built latches (ALE/DLE) for those DQ inputs.
7–
ns
tCTLdeassert_DQdeassert
CTL deasserted pulse width for CTL inputs that signify DQ
inputs valid at the deasserting edge but do not employ
in-built latches (ALE/DLE) for those DQ inputs.
20
–
ns
tCTLassert_DQlatch
CTL asserted pulse width for CTL inputs that employ
in-built latches (ALE/DLE) to latch the DQ inputs. In this
non-DDR case, in-built latches are always close at the
deasserting edge.
7–
ns
tCTLdeassert_DQlatch
CTL deasserted pulse width for CTL inputs that employ
in-built latches (ALE/DLE) to latch the DQ inputs. In this
non-DDR case, in-built latches always close at the
deasserting edge.
10
–
ns
tCTLassert_DQlatchDDR
CTL asserted pulse width for CTL inputs that employ
in-built latches (DLE) to latch the DQ inputs in DDR mode.
10
–
ns
tCTLdeassert_DQlatchDDR
CTL deasserted pulse width for CTL inputs that employ
in-built latches (DLE) to latch the DQ inputs in DDR mode.
10
–
ns
tAA
DQ/CTL input to DQ output time when DQ change or CTL
change needs to be detected and affects internal updates
of input and output DQ lines.
–30
ns
tDO
CTL to data out when the CTL change merely enables the
output flop update whose data was already established.
–25
ns
tOELZ
CTL designated as OE to low-Z. Time when external
devices should stop driving data.
0–
ns
tOEHZ
CTL designated as OE to high-Z
8
8
ns
tCLZ
CTL (non-OE) to low-Z. Time when external devices
should stop driving data.
0–
ns
tCHZ
CTL (non-OE) to high-Z
30
30
ns
tCTLalpha
CTL to alpha change at output
–
25
ns
tCTLbeta
CTL to beta change at output
–
30
ns
tDST
Addr/data setup when DLE/ALE not used
2
–
ns
tDHT
Addr/data hold when DLE/ALE not used
20
–
ns



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