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1N5822U Datasheet(PDF) 2 Page - STMicroelectronics

Part # 1N5822U
Description  Aerospace 40 V power Schottky rectifier
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

1N5822U Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
1N5822U
2/7
Doc ID 16007 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.32 x IF(AV) + 0.050 IF
2
(RMS )
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
40
V
IF(RMS)
Forward rms current
10
A
IF(AV)
Average forward rectified current
Tc = 135 °C, δ = 0.5
3
A
IFSM
Forward surge current
tp = 10 ms sinusoidal
80
A
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
150
°C
Tsol
Maximum soldering temperature (2)
2.
Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed.
245
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
7
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test : tp = 5 ms,
δ < 2%
Reverse current
Tj = -55 °C
VR = 40 V
--
40
µA
Tj = 25 °C
-
-
80
Tj = 100 °C
-
-
12
mA
VF
(2)
2.
Pulse test : tp = 680 µs,
δ < 2%
Forward voltage
Tj = 25 °C
IF = 1A
-
-
0.4
V
Tj = -55 °C
IF = 3 A
-
-
0.56
Tj = 25 °C
-
-
0.485
Tj = 100 °C
-
-
0.455
Tj = 25 °C
IF = 9.4 A
-
-
0.70
Table 5.
Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Cj
Diode capacitance
VR = 5 V, F = 1 MHz
-
-
240
pF
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
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