1N5822U datasheet(3/7 Pages) STMICROELECTRONICS

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1N5822U

Characteristics

Doc ID 16007 Rev 2

3/7

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

δ=0.05

δ=0.1

d=0.2

δ=0.5

δ=1

δ=tp/T

IF(av) (A)

PF(av)(W)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

100

125

150

th(j-a)=Rth(j-c)

δ=tp/T

th(j-a)=120 °C/W

IF(av)(A)

Tamb(°C)

Figure 3.

Non repetitive surge peak forward

current versus overload duration

(maximum values)

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration

1.E-03

1.E-02

1.E-01

1.E+00

c=25 °C

c=75 °C

c=125 °C

δ =0.5

t(s)

IM(A)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

Zth(j-c)/Rth(j-c)

tp(s)

Figure 5.

Reverse leakage current versus

reverse voltage applied (typical

values)

Figure 6.

Forward voltage drop versus

forward current (typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

j=125°C

j=25°C

j=50°C

j=75°C

j=100°C

j=150°C

IR(mA)

VR(V)

0.01

0.10

1.00

10.00

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

j=25°C

j=125°C

j=100°C

VFM(V)

IFM(A)

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