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STPS20100HR Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS20100HR Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STPS20100HR Characteristics Doc ID 16953 Rev 1 3/10 s Table 4. Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C Symbol Characteristic MIL-STD-750 test method Test conditions Values Units Min. Max. IR Reverse Current 4016 DC method, VR = 100 V - 30 µA VF1 (1) Forward Voltage 4011 Pulse method, IF = 10 A - 780 mV V F2 (1) Pulse method, IF = 20 A - 1 V C Capacitance 4001 VR = 10 V, F = 1 MHz - 700 pF Z th(j-c) Relative thermal impedance, junction to case 3101 IH = 15 to 40 A, tH = 50 ms IM = 50 mA, tmd = 100 µs Calculate ΔVF °C/W 1. Pulse width ≤ 680µs, Duty Cycle ≤ 2% Table 5. Electrical measurements at high and low temperatures (per diode) Symbol Characteristic MIL-STD-750 test method Test conditions Values Units Min. Max. I R Reverse Current 4016 Tcase = +125 (+0, -5) °C DC method, VR = 100 V -20 mA V F2 (1) Forward Voltage 4011 Tcase = +125 (+0, -5) °C pulse method, IF = 20 A -900 mV Tcase = -55 (+5, -0) °C pulse method, IF = 20 A -1.1 V 1. Pulse width ≤ 680µs, Duty Cycle ≤ 2% |
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