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STRH40N6 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STRH40N6
Description  Rad-Hard N-channel 60 V, 30 A Power MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STRH40N6 Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STRH40N6
6/16
Doc ID 18351 Rev 5
Table 8.
Pre-irradiation source drain diode(1)
1.
Refer to the Figure 16: Source drain diode.
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(2)
2.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
30
120
A
A
VSD
(3)
3.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 30 A, VGS = 0
1.1
V
trr
(4)
Qrr
(4)
IRRM
(4)
4.
Not tested in production, guaranteed by process.
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, di/dt = 100 A/µs
VDD= 48 V, Tj = 25 °C
288
360
3.3
18.2
432
ns
µC
A
trr
(4)
Qrr
(4)
IRRM
(4)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, di/dt = 100 A/µs
VDD= 48 V, Tj = 150 °C
352
440
4.4
19.8
529
ns
µC
A



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