STRH40N6 datasheet(3/16 Pages) STMICROELECTRONICS

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STRH40N6

Electrical ratings

Doc ID 18351 Rev 5

3/16

Electrical ratings

(TC= 25 °C unless otherwise specified)

Table 2.

Absolute maximum ratings (pre-irradiation)

Symbol

Parameter

Value

Unit

VDS

(1)

This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).

Drain-source voltage (VGS = 0)

VGS

(2)

This value is guaranteed over the full range of temperature.

Gate-source voltage

±20

(3)

Rated according to the Rthj-case + Rthc-s

Drain current (continuous) at TC= 25°C

(3)

Drain current (continuous) at TC= 100°C

IDM

(4)

Pulse width limited by safe operating area

Drain current (pulsed)

120

PTOT

(5)

Rated according to the Rthj-case

Total dissipation at TC= 25°C

PTOT

(3)

Total dissipation at TC= 25°C

dv/dt (6)

ISD ≤ 40 A, di/dt ≤ 1060 A/µs, VDD = 80 %V(BR)DSS

Peak diode recovery voltage slope

2.5

V/ns

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.67

°C/W

Rthc-s

Case-to-sink

0.21

°C/W

Rthj-amb(1)

When mounted on heat sink of 300 mm², t < 10 sec

Thermal resistance junction -amb

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

(1)

Single pulse avalanche energy

(starting Tj= 25°C, Id= 20 A, Vdd= 40 V)

354

EAS

Single pulse avalanche energy

(starting Tj= 110 °C, Id= 20 A, Vdd= 40 V)

105

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