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STRH40N6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STRH40N6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() This is information on a product in full production. October 2012 Doc ID 18351 Rev 5 1/16 16 STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet — production data Features ■ Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened Applications ■ Satellite ■ High reliability Description This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. Figure 1. Internal schematic diagram Note: Contact ST sales office for information about the specific conditions for tape and reel, product in die form and other packages. VBDSS ID RDS(on) Qg 60 V 30 A 36 mOhm 43 nC SMD.5 Table 1. Device summary Part numbers ESCC part number Quality level Package Lead finish Mass (g) Temp. range EPPL STRH40N6S1 - Engineering model SMD.5 Gold 2 -55 to 150°C - STRH40N6SG TBD ESCC flight Target www.st.com |
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