November 2011

Doc ID 17486 Rev 6

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STRH100N10

Rad-Hard 100 V, 48 A N-channel Power MOSFET

Features

Applications

Description

This N-channel Power MOSFET is developed with

STMicroelectronics unique STripFET™ process.

It has specifically been designed to sustain high

TID and provide immunity to heavy ion effects.

This Power MOSFET is fully ESCC qualified.

Figure 1.

Internal schematic diagram

Note:

Contact ST sales office for information about the specific conditions for product in die form

and for other packages.

100 V

48 A

30 mOhm

135 nC

TO-254AA

1

2

3

Table 1.

Device summary

Part number

ESCC part

number

Quality

level

Package

Lead

finish

Mass (g)

Temp. range

EPPL

STRH100N10HY1

-

Engineering

model

TO-254AA

Gold

10

-55 to 150°C

-

STRH100N10HY01

5205/021/01

ESCC flight

Yes

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