STRH100N10 datasheet(5/17 Pages) STMICROELECTRONICS

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STRH100N10

Electrical characteristics

Doc ID 17486 Rev 6

5/17

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Pre-irradiation

Table 5.

Pre-irradiation on/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage drain

current (VGS = 0)

80% BVDss

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = 20 V

VGS = -20 V

-100

100

BVDSS

(1)

This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).

Drain-to-source breakdown

voltage

VGS = 0, ID = 1 mA

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 1 mA

4.5

RDS(on)

Static drain-source on

resistance

VGS = 12 V; ID = 24 A

0.030

0.035

Ω

Table 6.

Pre-irradiation dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

(1)

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VGS = 0, VDS = 25 V,

f=1 MHz

3940

543

190

4925

679

237

5910

814

284

Coss eq.

(1)

This value is guaranteed over the full range of temperature.

Equivalent output

capacitance (2)

This value is defined as the ratio between the Qoss and the voltage value applied.

VGS = 0, VDD = 80 V

480

Qgs

Qgd

Total gate charge

Gate-to-source charge

Gate-to-drain (“Miller”)

charge

VDD = 50 V, ID = 48 A,

VGS=12 V

108

135

162

(3)

Not tested, guaranteed by process.

Gate input resistance

f=1MHz gate DC bias=0

test signal level=20mV

open drain

1.2

1.7

Ω

Gate inductance

4.5

Source inductance

7.5

Drain inductance

7.5

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