Charge

Pump

Thermal

Shutdown

GND2

GND1

0.01 μF

VM

VM

HS Gate

Drive

V

M

V

M

Internal

Reference

and

Regs

Int. VCC

Control

Logic

VM

VM

LS Gate

Drive

VM

OUT2

Predriver

+

10 μF

GND3

V3P3OUT

0.1 μF

Predriver

Predriver

OCP

VM

OCP

VM

OCP

B0480-01

EN1

IN2

IN3

EN3

FAULT

RESET

IN1

SLEEP

EN2

COMPN

COMPO

COMPP

OUT1

CP 1

CP 2

VCP

OUT3

Optional

Optional

Optional

PGND3

PGND2

PGND1

DRV8313

SLVSBA5A – OCTOBER 2012 – REVISED NOVEMBER 2012

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

FUNCTIONAL BLOCK DIAGRAM

2

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Product Folder Links: DRV8313