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AD8009 Datasheet(PDF) 3 Page - Analog Devices

Part # AD8009
Description  1 GHz, 5,500 V/us Low Distortion Amplifier
PDF  12 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD8009 Datasheet(HTML) 3 Page - Analog Devices

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AD8009
–3–
REV. B
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
Small Outline Package (R) . . . . . . . . . . . . . . . . . 0.75 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±VS
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±3.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range R Package . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . . . –40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air:
8-Lead SOIC Package:
θ
JA = 155
°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8009 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately +150
°C. Exceeding
this limit temporarily may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by the
package. Exceeding a junction temperature of +175
°C for an
extended period can result in device failure.
While the AD8009 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150
°C) is not exceeded under all conditions.
To ensure proper operation, it is necessary to observe the
maximum power derating curves.
AMBIENT TEMPERATURE – °C
90
80
2.0
1.0
0
1.5
0.5
–50
TJ = +150°C
70
60
50
40
30
20
10
0
–40 –30 –20 –10
8-LEAD SOIC PACKAGE
5-LEAD SOT-23 PACKAGE
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Temperature
Package
Package
Branding
Model
Range
Description
Option
Information
AD8009AR
–40
°C to +85°C
8-Lead SOIC
SO-8
AD8009AR-REEL
–40
°C to +85°C
13" Tape and Reel
SO-8
AD8009ART
–40
°C to +85°C
5-Lead SOT-23
RT-5
HKJ
AD8009ART-REEL
–40
°C to +85°C
13" Tape and Reel
RT-5
HKJ
AD8009ART-REEL7
–40
°C to +85°C
7" Tape and Reel
RT-5
HKJ
AD8009-EB
Evaluation Board
SO-8
WARNING!
ESD SENSITIVE DEVICE



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