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AO7413 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO7413 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page ![]() AO7413 20V P-Channel MOSFET General Description Product Summary VDS -20V ID (at VGS=-10V) -1.4A RDS(ON) (at VGS= -10V) < 113m Ω RDS(ON) (at VGS= -4.5V) < 135m Ω RDS(ON) (at VGS= -2.5V) < 180m Ω Typical ESD protection HBM Class 2 Symbol VDS The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. V Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted Drain-Source Voltage -20 S G D S G D SC-70 (SOT-323) Top View VDS VGS IDM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJL °C/W °C/W Maximum Junction-to-Ambient A D 280 425 320 -13 TA=25°C TA=70°C Pulsed Drain Current C Continuous Drain Current Maximum Junction-to-Lead Junction and Storage Temperature Range Parameter Typ Max V Units V ±12 Gate-Source Voltage Drain-Source Voltage -20 A ID -1.4 -1.2 °C/W RθJA 300 350 360 Maximum Junction-to-Ambient A -55 to 150 °C Thermal Characteristics Power Dissipation B PD TA=25°C W 0.35 0.22 TA=70°C Rev 4: Nov 2011 www.aosmd.com Page 1 of 5 |
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