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ADP3156 Datasheet(PDF) 9 Page - Analog Devices |
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ADP3156 Datasheet(HTML) 9 Page - Analog Devices |
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9 / 12 page ![]() REV. 0 ADP3156 –9– current of 1.7 A and an average short-circuit current of about 6.5 A—meaning that there is actually a small degree of short- circuit current foldback. To safely carry the maximum current, the sense resistor must have a power rating of at least (11.2 A – 1.07 A) 2 × 12.9 mW = 1.3 W. Current Transformer Option An alternative to using a low value and high power current sense resistor is to reduce the sensed current by using a low cost cur- rent transformer and a diode. The current can then be sensed with a small size, low cost SMT resistor. Using a transformer with one primary and 50 secondary turns reduces the worst-case resistor dissipation to a few mW. Another advantage of using this option is the separation of the current and voltage sensing, which makes the voltage sensing more accurate. Power MOSFETs Two external N-channel power MOSFETs must be selected for use with the ADP3156, one for the main switch, and an identi- cal one for the synchronous switch. The main selection param- eters for the power MOSFETs are the threshold voltage VGS(TH) and the on resistance RDS(ON). The minimum input voltage dictates whether standard threshold or logic-level threshold MOSFETs must be used. For VIN > 8 V, standard threshold MOSFETs (VGS(TH) < 4 V) may be used. If VIN is expected to drop below 8 V, logic-level threshold MOSFETs (VGS(TH) < 2.5 V) are strongly recommended. Only logic-level MOSFETs with VGS ratings higher than the absolute maximum of VCC should be used. The maximum output current IOMAX determines the RDS(ON) requirement for the two power MOSFETs. When the ADP3156 is operating in continuous mode, the simplifying assumption can be made that one of the two MOSFETs is always conducting the average load current. For VIN = 5 V and VOUT = 1.8 V, the maximum duty ratio of the high side FET is: DMAXHF = (1 – fMIN × tOFF) = (1 – 150 kHz × 3.2 µs) = 52% The duty ratio of the low side (synchronous rectifier) FET un- der the maximum load condition is: DMAXLF = 1 – DMAXHF = 48% The maximum rms current of the high side FET is: IRMSHS = [DMAXHF (ILVALLEY2 + ILPEAK2 + ILVALLEYILPEAK)/3] 0.5 = 7.32 A rms The maximum rms current of the low side FET is: IRMSLS = [DMAXLF (ILVALLEY2 + ILPEAK2 + ILVALLEYILPEAK)/3] 0.5 = 7.03 A rms The RDS(ON) for each FET can be derived from the allowable dissipation. Allowing 8% of the maximum output power for FET dissipation, the total dissipation will be: PFETALL = 0.08 VOIOMAX = 1.0 W Allocating half of the total dissipation for the high side FET and half for the low side FET, the required minimum FET resis- tances will be: RDS(ON)HSF(MIN) = 1 W × 52%/(7.32A) 2 = 9.7 m Ω RDS(ON)LSF(MIN) = 1 W × 48%/(7.03A) 2 = 9.7 m Ω Note that there is a trade-off between converter efficiency and cost. Larger FETs reduce the conduction losses and allow higher efficiency, but increase the system cost. If efficiency is not a major concern, the International Rectifier IRL3103 is an economical choice for both the high side and low side positions. Those devices have an RDS(ON) of 14 mΩ at VGS = 10 V and at +25 °C. The low side FET is turned on with at least 10 V. The high side FET, however, is turned on with only 12 V – 5 V = 7 V. Checking the typical output characteristics of the device in the data sheet, shows that for an output current of 10 A, and at a VGS of 7 V, the VDS is 0.15 V. This gives an RDS(ON) only slightly above the one specified at a VGS of 10 V, so the resis- tance increase due to the reduced gate drive can be neglected. The specified RDS(ON) at the expected highest FET junction temperature of +140 °C must be modified by an R DS(ON) multi- plier, using the graph in the data sheet. In this case: RDS(ON)MULT = 1.7 Using this multiplier, the expected RDS(ON) at +140°C is 1.7 × 14 = 24 mΩ. The high side FET dissipation is: PDFETHS = IRMSHS 2R DS(ON) + 0.5 VINILPEAKQGfMIN/IG ~ 2.54 W where the second term represents the turn-off loss of the FET. (In the second term, QG is the gate charge to be removed from the gate for turn-off and IG is the gate current. From the data sheet, QG is about 50 nC–70 nC and the gate drive current provided by the ADP3156 is about 1 A.) The low side FET dissipation is: PDFETLS = Irmsls 2RDS(ON) = 0.49 W (Note that there are no switching losses in the low side FET.) To maintain an acceptable MOSFET junction temperature, proper heat sinking should be used. The heat sink and airflow are chosen based on how low the impedance must be reduced in order to keep the MOSFET’s junction temperature at an ac- ceptably low level, according to the formula: θ HA = [(TJMAXOP – TA)¸PDFET] – θJC – θCH where θ HA is the thermal resistance from the heat sink to ambi- ent air (and depends on airflow), TJMAXOP is the user-deter- mined maximum acceptable operating temperature of the MOSFET, and the last two factors are the thermal resistance from junction-to-case of the device, and case-to-heat sink. Typi- cally, the junction-to-case thermal resistance is 2 °C/W, and the case-to-heat sink resistance is 0.5 °C/W. CIN Selection and Input Current di/dt Reduction In continuous-inductor-current mode, the source current of the high side MOSFET is a square wave with a duty ratio of VO/VlN. To keep the input ripple voltage at a low value, one or more capacitors with low equivalent series resistance (ESR) and ad- equate ripple-current rating must be connected across the input terminals. The maximum rms current of the input bypass ca- pacitors is: ICINRMS = IOMAX [DMAX × (1–DMAX)] 0.5 = 3.5 A For an FA-type capacitor with 2700 mF capacitance and 10 V voltage rating, the ESR is 34 m Ω and the allowed ripple current at 100 kHz (and similar frequencies) is 1.94 A. At +105 °C, two such capacitors may be connected in parallel to handle the cal- culated ripple current. To further reduce the effect of the ripple voltage on the system supply voltage bus and to reduce the input-current di/dt to below the recommended maximum of 0.1 A/ µs, an additional small inductor should be inserted between the converter and the supply bus (see Figure 2). |
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