ITC137P

www.ixysic.com

3

R05

EXAMPLE CIRCUIT

Parameter

Conditions

Symbol

Min

Typ

Max

Units

Output Characteristics

Phototransistor Blocking Voltage

I

20

50

-

V

Phototransistor Dark Current

V

I

CEO

-

50

500

nA

Saturation Voltage

I

V

SAT

-

0.3

0.5

V

Current Transfer Ratio

I

CTR

33

400

-

%

Input Characteristics

Input Control Current

I

I

F

-2

6

mA

Input Voltage Drop

I

V

F

0.9

1.2

1.4

V

Input Current (Detector Must be Off)

I

I

F

525

-

A

Electrical Characteristics @25ºC: Detector Section

Parameter

Conditions

Symbol

Min

Typ

Max

Units

Reverse Voltage

-

V

RD

-

-

100

V

Forward Voltage Drop

I

V

FD

-

-

1.5

V

Reverse Leakage Current

T

I

RD

--

10

A

T

-

-

50

Forward Current

Continuous

-

I

FD

-

-

140

mA

Peak

t=10ms

-

-

500

Electrical Characteristics @25ºC (Unless Otherwise Noted): Bridge Rectifier Section

MOSFET

DRIVER

CIRCUIT

4

1

3

2

7

8

6

5

16

15

14

13

12

11

10

9

DIGITAL

GROUND

ISOLATED

GROUND

CPU

RING

OFF-HOOK

680

V

CC

15V

4.7F

+

4.7F

+

51k

15

10F

25k

COUPLING

TRANSFORMER

10

300V SURGE

PROTECTION

TELEPHONE

LINE

RING

18Vx 2

0.47F

250V

8.2k

V

CC

TIP

A

B

A

B

Parameter

Conditions

Symbol

Min

Typ

Max

Units

Zener Voltage Between Pins 4&5 and Pins 6&5

I

V

Z

-

4.3

-

V

Zener Voltage Between Pins 12&11

I

V

Z

-15

-

V

Input to Output Capacitance

-

C

I/O

-3

-

pF

Input to Output Isolation

-

V

I/O

3750

-

-

V

rms

Electrical Characteristics @25ºC: Zener Diodes