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ACT-D1M96S Datasheet(PDF) 10 Page - Aeroflex Circuit Technology

Part # ACT-D1M96S
Description  ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module
PDF  14 Pages
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Manufacturer  AEROFLEX [Aeroflex Circuit Technology]
Direct Link  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

ACT-D1M96S Datasheet(HTML) 10 Page - Aeroflex Circuit Technology

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Aeroflex Circuit Technology
SCD3369-1 REV C 5/31/00 Plainview NY (516) 694-6700
10
Delay time, final data in of WRT operation to
DEAC or DCAB command
tWR
20
ns
Refresh interval
tREF
50
ms
Delay time, CS low or high to input enabled or
inhibited
nCDD
0
0
cycle
Delay time, CKE high or low to CLK enabled or
disabled
nCLE
1
1
cycle
Delay time, final data in of WRT operation to
READ, READ-P, WRT, or WRT-P
nCWL
1
cycle
Delay time, ENBL or MASK command to
enabled or masked data in
nDID
0
0
cycle
Delay time, ENBL or MASK command to
enabled or masked data out
nDOD
2
2
cycle
Delay time, DEAC or DCAB, command to DQ in
high-impedance state
nHZP2
CAS latency = 2
2
cycle
Delay time, WRT command to first data in
nWCD
0
0
cycle
Delay time, STOP command to READ or WRT
command
nBSD
2
cycle
† See Figure 2 - LVTTL Load Circuit for load circuits.
‡ All references are made to the rising transition of CLK, unless otherwise noted.
NOTES:
1.
tAC is referenced from the rising transition of CLK that is previous to the data-out cycle. For example, the first data out tAC is
referenced from the rising transition of CLK within the following cycle: CAS latency minus one cycle after the READ command. An access time is measured
at output reference level 1.5 V.
2. For read or write operations with automatic deactivate,
tRCD must be set to satisfy minimum tRAS .
3. CL = CAS Latency.
4. The temperature rise of
θ
jc is negligible due to the low duty cycle during testing.
AC Timing
†‡
(cont.)
(Vcc = 3.3V ±0.3V, Tc = -55°C to +110°C, See Note 4)
Parameter
Symbol
Test Conditions
Min
Max
Units



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