STM32F103RET6 datasheet(84/130 Pages) STMICROELECTRONICS

84 / 130 page

Electrical characteristics

STM32F103xC, STM32F103xD, STM32F103xE

84/130

Doc ID 14611 Rev 8

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

5.3.12

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Table 42.

EMI characteristics

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs. [fHSE/fHCLK]

Unit

8/48 MHz 8/72 MHz

SEMI

Peak level

VDD = 3.3 V, TA = 25 °C,

LQFP144 package

compliant with IEC

61967-2

0.1 to 30 MHz

dBµV

30 to 130 MHz

130 MHz to 1GHz

SAE EMI Level

Table 43.

ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class Maximum value(1)

Based on characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming

to JESD22-A114

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device model)

TA = +25 °C, conforming

to JESD22-C101

500

STM32F103RET6 Datasheet(PDF) 84 Page - STMicroelectronics

STM32F103RET6 Datasheet(HTML) 84 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL