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PAM2306D Datasheet(PDF) 5 Page - Power Analog Micoelectronics |
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PAM2306D Datasheet(HTML) 5 Page - Power Analog Micoelectronics |
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5 / 13 page ![]() PAM2306D Dual High-Efficiency PWM Step-Down DC-DC Coverter 5 , Power Analog Microelectronics Inc www.poweranalog.com Electrical Characteristic T =25 C, V =3.6V, V =1.8V, C =10µF, C =10µF, L=2.2µH, unless otherwise noted. A IN O IN O O PARAMETER SYMBOL Test Conditions MIN TYP MAX UNITS Input Voltage Range VIN 2.5 5.5 V Regulated Feedback Voltage V FB 0.588 0.6 0.612 V Reference Voltage Line Regulation ΔVFB 0.3 % /V Regulated Output Voltage Accuary VO IO = 100mA -3 +3 % Peak Inductor Current IPK VIN=3V ,VFB = 0.5V or VO=90% 1.5 A Output Voltage Line Regulation LNR VIN = 2.5V to 5V, IO=10mA 0.2 0.5 % /V Output Voltage Load Regulation LDR IO=1mA to 1A 1.5 % Quiescent Current (per channel) IQ No load 40 70 µA Shutdown Current (per channel) ISD VEN = 0V 0.1 1 µA VO = 100% 1.2 1.5 1.8 MHz Oscillator Frequenc y fOSC VFB = 0V or VO = 0V 500 kHz P MOSFET 0.3 0.45 Ω Drain-Sourc e On-State Resistance RDS(O N) IDS=100mA N MOSFET 0.35 0.5 Ω SW Leakage Current (per channel) ILSW ±0.01 1 µA EN Threshold High VEH 1.5 V EN Threshold Low VEL 0.3 V EN Leak age Current IEN ±0.01 µA Over Temperature Protection OTP 150 °C OTP Hys teresis OTH 30 °C 02/2012 Rev1.1 |
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