T3035H datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

T3035H T3050H

2/9

Doc ID 17029 Rev 4

Characteristics

Table 2.

Absolute maximum rating

Symbol

Parameter

Value

Unit

IT(RMS) On-state rms current (full sine wave)

TO-220AB

Tc = 121 °C

TO-220AB

insul.

Tc = 92 °C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25 °C)

F = 50 Hz

t = 20 ms

270

F = 60 Hz

t = 16.7 ms

284

I²tI²t Value for fusing

tp = 10 ms

487

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 150 °C

A/µs

VDSM/

VRSM

Non repetitive surge peak

off-state volt-age

tp = 10 µs

Tj = 25 °C

VDSM/VRSM

+100

IGM

Peak gate current

tp = 20 µs

Tj = 150 °C

PG(AV)

Average gate power dissipation

Tj = 150 °C

Tstg

Storage junction temperature range

Operating junction temperature range

-40 to +150

°C

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

T3035H T3050H

IGT

(1)

Minimum IGT is guaranted at 20 % of IGT max.

VD = 12 V RL = 33 Ω

I - II - III

MAX.

VGT

I - II - III

MAX.

1.0

VGD

VD = VDRM RL = 3.3 kΩ

I - II - III

MIN.

0.15

(2)

For both polarities of A2 referenced to A1.

IT = 500 mA

MAX.

IG = 1.2 IGT

I - III

MAX.

110

dV/dt (2) VD = 67 %VDRM gate open

Tj = 150 °C

MIN.

1000

1500

V/µs

(dI/dt)c

(2)

Without snubber

Tj = 150 °C

MIN.

A/ms

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