T3035H datasheet(3/9 Pages) STMICROELECTRONICS

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T3035H T3050H

Characteristics

Doc ID 17029 Rev 4

3/9

Table 4.

Static characteristics

Symbol

Test conditions

Value

Unit

VTM

(1)

ITM = 42 A

tp = 380 µs

Tj = 25 °C

MAX.

1.55

Vto

(1)

Threshold voltage

Tj = 150 °C

MAX.

0.85

(1)

Dynamic resistance

Tj = 150 °C

MAX.

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX.

µA

Tj = 150 °C

8.5

VD/VR = 400V (at peak mains voltage)

Tj = 150 °C

MAX.

VD/VR = 200V (at peak mains voltage)

Tj = 150 °C

5.5

for both polarities of A2 referenced to A1.

Table 5.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

TO-220AB

0.8

°C/W

TO-220AB Insul

1.6

Rth(j-a)

Junction to ambient

TO-220AB / TO-220AB Insul

°C/W

Figure 1.

Maximum power dissipation versus

rms on-state current

(full cycle 180°)

Figure 2.

On-state rms current vs case

temperature

P(W)

(A)

T(RMS)

(A)

T(RMS)

100

125

150

T (°C)

TO-220AB- ins

TO-220AB

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