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T3035H Datasheet(PDF) 4 Page - STMicroelectronics

Part # T3035H
Description  Snubberless high temperature 30 A Triacs
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T3035H Datasheet(HTML) 4 Page - STMicroelectronics

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Characteristics
T3035H T3050H
4/9
Doc ID 17029 Rev 4
Figure 3.
On-state rms current versus
ambient temperature
(free air convection)
Figure 4.
Relative variation of thermal
impedance versus pulse duration
I
(A)
T(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
T (°C)
a
K = [Z / R ]
th
th
1.0E-02
1.0E-01
1.0E+00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t (s)
p
Z
th(j-c)
Z
th(j-a)
Figure 5.
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
Figure 6.
Relative variation of holding
current and latching current vs
junction temperature (typical value)
I , V [T ] / I , V [T = 25 °C]
GT
GT
j
GT
GT
j
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
IQ3
GT
I
Q1-Q2
GT
V
Q1-Q2-Q3
GT
T (°C)
j
typical value
0.0
0.5
1.0
1.5
2.0
-50
-25
0
25
I , I [T ] / I , I [T = 25 °C]
HL
j
H
L
j
50
75
100
125
150
T (°C)
j
I
H
I
L
Figure 7.
Surge peak on-state current vs
number of cycles
Figure 8.
Non repetitive surge peak on-state
current for a sinusoidal pulse
I
(A)
TMS
0
50
100
150
200
250
1
10
100
1000
One cycle
t = 20 ms
Number of cycles
Non Repetitive
T initial = 25 °C
j
Repetitive
T = 121 °C
C
I
(A), I²t (A²s)
TSM
10
100
1000
10000
0.01
0.10
1.00
10.00
width t < 10 ms, and corresponding value of I²t
p
t (ms)
Tj initial = 25 °C
I²t
I
TSM
dl/dt limitation: 50 A/µs



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