T3035H T3050H

Characteristics

Doc ID 17029 Rev 4

5/9

Figure 13.

Acceptable junction to ambient thermal resistance vs repetitive peak off-state voltage

and ambient temperature

Figure 9.

On state characteristics

(maximum values)

Figure 10.

Relative variation of critical rate of

decrease of main current vs

junction temeprature

I (A)

TM

1

10

100

1000

01

23

1

10

100

1000

01

23

45

T max:

V = 0.85 V

R = 15 m

J

to

d

Ω

V (V)

TM

T = 150 °C

j

T = 25 °C

j

0

1

2

3

4

5

6

7

8

9

10

11

25

50

75

100

125

150

T (°C)

j

(dI/dt) [T ]/(dI/dt) [T = 150 °C]

Cj

Cj

Figure 11.

Relative variation of static dV/dt

immunity vs junction temperature

Figure 12.

Relative variation of leakage

current vs junction temperature for

different values of blocking voltage

0

1

2

3

4

5

6

7

8

9

10

11

25

50

75

100

125

150

dV/dt[T ]/dV/dt[T = 150 °C]

jj

V = V = 400 V

DR

T (°C)

j

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

25

50

75

100

125

150

T (°C)

j

I/I[T ;V/V]/I

/I

DRM RRM

j

DRM

RRM

DRM RRM

[T = 150 °C; 600 V]

j

V

= V

= 200 V

DRM

RRM

V

= V

= 400 V

DRM

RRM

V

= V

= 600 V

DRM

RRM

R

(°C/W)

th(j-a)

0

5

10

15

20

25

30

35

40

45

50

55

60

65

20

30

40

50

60

70

80

90

100

110

120

130

140

Ta(°C)

voltage and ambient temperature

V= V= 600 V

DRM

RRM

V

= V

= 200 V

DRM

RRM

V

= V

= 400 V

DRM

RRM