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FDMS8026S Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part # FDMS8026S
Description  Advanced package and Silicon combination for low rDS(on) and high efficiency
PDF  8 Pages
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Manufacturer  ETC2 [List of Unclassifed Manufacturers]
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FDMS8026S Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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www.fairchildsemi.com
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©2010 Fairchild Semiconductor Corporation
FDMS8026S Rev.C1
Typical Characteristics T
J = 25°C unless otherwise noted
Figure 1.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
V
GS = 4.5 V
V
GS = 4 V
V
GS = 3.5 V
V
GS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
GS = 3 V
V
GS = 10 V
V
DS, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
020
40
60
80
100
0
1
2
3
4
5
V
GS = 6 V
V
GS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
V
GS = 4 V
V
GS = 4.5 V
V
GS = 3 V
V
GS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 19 A
VGS = 10 V
TJ, JUNCTION TEMPERATURE (
oC
)
vs Junction Temperature
Figure 4.
24
68
10
2
4
6
8
10
12
14
16
TJ = 125 oC
ID = 19 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
12
3
4
0
20
40
60
80
100
TJ = 125 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current



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