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FDMS8026S Datasheet(PDF) 6 Page - List of Unclassifed Manufacturers |
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FDMS8026S Datasheet(HTML) 6 Page - List of Unclassifed Manufacturers |
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6 / 8 page ![]() www.fairchildsemi.com 6 ©2010 Fairchild Semiconductor Corporation FDMS8026S Rev.C1 0 5 10 15 20 25 0.000001 1E-5 0.0001 0.001 0.01 TJ = 125 oC TJ = 100 oC TJ = 25 oC V DS, REVERSE VOLTAGE (V) SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8026S. Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. Typical Characteristics (continued) 0 50 100 150 200 -5 0 5 10 15 20 25 di/dt = 300 A/μs TIME (ns) Figure 15. SyncFET body diode reverse leakage versus drain-source voltage Figure 14. FDMS8026S SyncFET body diode reverse recovery characteristic |
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