FDMS8026S datasheet(1/8 Pages) ETC2

Part #	FDMS8026S

Description	Advanced package and Silicon combination for low rDS(on) and high efficiency

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August 2010

FDMS8026S Rev.C1

www.fairchildsemi.com

1

FDMS8026S

N-Channel PowerTrench® SyncFETTM

30 V, 22 A, 4.3 m

Ω

Features

Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A

Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A

Advanced package and Silicon combination for low rDS(on)

and high efficiency

SyncFET Schottky Body Diode

MSL1 robust package design

100% UIL tested

RoHS Compliant

General Description

The FDMS8026S has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

rDS(on) while maintaining excellent switching performance.This

device has the added benefit of an efficient monolithic Schottky

body diode.

Applications

Synchronous Rectifier for DC/DC Converters

Notebook Vcore/GPU low side switch

Networking Point of Load low side switch

Telecom secondary side rectification

4

3

2

1

5

6

7

8

Power 56

D

S

G

D

G

S

Pin 1

Bottom

Top

MOSFET Maximum Ratings T

A= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

30

V

VGS

Gate to Source Voltage

(Note 4)

±20

V

ID

Drain Current -Continuous (Package limited)

TC = 25°C

22

A

-Continuous (Silicon limited)

TC = 25°C

80

-Continuous

TA = 25°C

(Note 1a)

19

-Pulsed

100

EAS

Single Pulse Avalanche Energy

(Note 3)

33

mJ

PD

Power Dissipation

TC = 25°C

41

W

Power Dissipation

TA = 25°C

(Note 1a)

2.5

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

3.0

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS8026S

Power 56

13 ’’

12 mm

3000 units

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