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BAT46WH Datasheet(PDF) 5 Page - NXP Semiconductors |
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BAT46WH Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() BAT46WH All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 28 November 2011 5 of 12 NXP Semiconductors BAT46WH Single Schottky barrier diode (1) Tamb = 150 C (2) Tamb = 125 C (3) Tamb =85 C (4) Tamb =25 C (5) Tamb = 40 C (1) Tamb = 125 C (2) Tamb =85 C (3) Tamb =60 C (4) Tamb =25 C (5) Tamb = 40 C Fig 3. Forward current as a function of forward voltage; typical values Fig 4. Reverse current as a function of reverse voltage; typical values f=1MHz; Tamb =25 C Fig 5. Diode capacitance as a function of reverse voltage; typical values 006aac396 VF (V) 0.0 1.2 0.8 0.4 10−3 10−2 10−1 1 IF (A) 10−4 (1) (2) (3) (4) (5) (3) (4) (5) 006aac397 IR (A) 10−6 10−8 10−7 10−3 10−4 10−5 10−2 10−9 VR (V) 0 100 60 80 20 40 (5) (1) (2) (4) (3) VR (V) 0 100 80 40 60 20 006aac398 35 Cd (pF) 25 15 5 0 10 20 30 |
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