BAT46WH datasheet(7/12 Pages) NXP

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BAT46WH

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Product data sheet

Rev. 2 — 28 November 2011

7 of 12

NXP Semiconductors

BAT46WH

Single Schottky barrier diode

Test information

The current ratings for the typical waveforms as shown in Figure 7, 8 and 9 are

calculated according to the equations:

with IM defined as peak current,

at DC, and

with IRMS defined as RMS current.

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

(1) IR =1mA

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle  =0.05

Oscilloscope: rise time tr =0.35ns

Fig 10. Reverse recovery time test circuit and waveforms

trr

(1)

+ IF

output signal

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 Ω

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

Fig 11. Duty cycle definition

006aaa812

duty cycle

δ =

FAV







RMS

FAV



RMS





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