NXP Semiconductors

PMC85XP

30 V P-channel MOSFET with pre-biased NPN transistor

PMC85XP

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Product data sheet

15 May 2013

3 / 15

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

P-channel Trench MOSFET

drain-source voltage

-

-30

V

gate-source voltage

-12

12

V

[1]

-

-3.4

A

[1]

-

-2.6

A

drain current

[1]

-

-1.6

A

peak drain current

-

-8

A

[2]

-

485

mW

[1]

-

1170

mW

total power dissipation

[2]

-

8300

mW

P-channel Trench MOSFET; source-drain diode

source current

[1]

-

-1.2

A

NPN RET

collector-base voltage

-

50

V

collector-emitter voltage

-

50

V

emitter-base voltage

-

10

V

positive

-

30

V

input voltage

negative

-

-5

V

output current

-

100

mA

peak collector current

-

100

mA

[2]

-

465

mW

[1]

-

985

mW

total power dissipation

[2]

-

4160

mW

Per device

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad

[2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.