PMC85XP datasheet(7/15 Pages) NXP

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NXP Semiconductors

PMC85XP

30 V P-channel MOSFET with pre-biased NPN transistor

PMC85XP

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Product data sheet

15 May 2013

7 / 15

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Crss

reverse transfer

capacitance

td(on)

turn-on delay time

rise time

td(off)

turn-off delay time

112

fall time

VDS = -15 V; ID = -2.6 A; RG(ext) = 6 Ω;

VGS = -4.5 V; Tj = 25 °C

P-channel Trench MOSFET; source-drain diode

VSD

source-drain voltage

IS = -1.2 A; VGS = 0 V; Tj = 25 °C

-0.8

-1.2

NPN RET

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tj = 25 °C

100

VCE = 30 V; IB = 0 A; Tj = 25 °C

µA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tj = 150 °C

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tj = 25 °C

170

µA

hFE

DC current gain

VCE = 5 V; IC = 10 mA; Tj = 25 °C

100

VCEsat

collector-emitter

saturation voltage

IC = 5 mA; IB = 0.25 mA; Tj = 25 °C

100

VI(off)

off-state input voltage

IC = 100 µA; VCE = 5 V; Tj = 25 °C

0.6

0.5

VI(on)

on-state input voltage

IC = 5 mA; VCE = 0.3 V; Tj = 25 °C

1.3

0.9

bias resistor 1

3.3

4.7

6.1

kΩ

bias resistor 2

kΩ

R2/R1

bias resistor ratio

collector capacitance

IE = 0 A; ie = 0 A; f = 1 MHz; Tj = 25 °C;

VCB = 10 V

2.5

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