NXP Semiconductors

PMC85XP

30 V P-channel MOSFET with pre-biased NPN transistor

PMC85XP

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Product data sheet

15 May 2013

5 / 15

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance

from junction to solder

point

-

10

15

K/W

NPN RET

[1]

-

233

270

K/W

thermal resistance

from junction to

ambient

in free air

[2]

-

110

127

K/W

thermal resistance

from junction to solder

point

-

25

30

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard

footprint.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad

017aaa398

10

1

(K/W)

10

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

FR4 PCB, standard footprint

Fig. 4. P-channel Trench MOSFET: Transient thermal impedance from junction to ambient as a function of pulse

duration; typical values