NXP Semiconductors

PMPB48EP

30 V, single P-channel Trench MOSFET

PMPB48EP

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Product data sheet

10 September 2012

5 / 14

017aaa542

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa543

10

1

10

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source

breakdown voltage

-30

-

-

V

gate-source threshold

voltage

-1

-1.5

-2.5

V

drain leakage current

-

-

-1

µA

gate leakage current

-

-

-100

nA