PMPB48EP datasheet(6/14 Pages) NXP

6 / 14 page

NXP Semiconductors

PMPB48EP

30 V, single P-channel Trench MOSFET

PMPB48EP

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Product data sheet

10 September 2012

6 / 14

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VGS = 20 V; VDS = 0 V; Tj = 25 °C

100

VGS = -10 V; ID = -4.7 A; Tj = 25 °C

mΩ

VGS = -10 V; ID = -4.7 A; Tj = 150 °C

mΩ

RDSon

drain-source on-state

resistance

VGS = -4.5 V; ID = -3.9 A; Tj = 25 °C

mΩ

gfs

forward

transconductance

VDS = -10 V; ID = -4.7 A; Tj = 25 °C

gate resistance

f = 1 MHz

Dynamic characteristics

QG(tot)

total gate charge

QGS

gate-source charge

2.5

QGD

gate-drain charge

VDS = -15 V; ID = -4.7 A; VGS = -10 V;

Tj = 25 °C

3.2

Ciss

input capacitance

860

Coss

output capacitance

105

Crss

reverse transfer

capacitance

VDS = -15 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

td(on)

turn-on delay time

7.4

rise time

17.5

td(off)

turn-off delay time

fall time

VDS = -15 V; ID = -4.7 A; VGS = -10 V;

RG(ext) = 6 Ω; Tj = 25 °C

10.4

Source-drain diode

VSD

source-drain voltage

IS = -1.8 A; VGS = 0 V; Tj = 25 °C

-0.8

-1.2

VDS (V)

-4

-3

-1

-2

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-8

-12

-4

-16

-20

(A)

-10 V

-4.5 V

-2.7 V

-2.5 V

-3 V

-3.3 V

VGS = -3.6 V

-4 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

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-10-5

-10-4

-10-3

-10-2

(A)

-10-6

VGS (V)

-4

-3

-1

-2

min

typ

max

Tj = 25 °C; VDS = -5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

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