PE42521 datasheet(4/16 Pages) PSEMI

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Document No. DOC-12814-3 |

UltraCMOS® RFIC Solutions

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PE42521

Product Specification

Electrostatic Discharge (ESD) Precautions

When handling this UltraCMOS® device, observe

the same precautions that you would use with

other ESD-sensitive devices. Although this device

contains circuitry to protect it from damage due to

ESD, precautions should be taken to avoid

exceeding the rating specified.

Latch-Up Avoidance

Unlike conventional CMOS devices, UltraCMOS®

devices are immune to latch-up.

Table 5. Control Logic Truth Table

Logic Select (LS)

The Logic Select feature is used to determine the

definition for the CTRL pin.

Switching Frequency

The PE42521 has a maximum 25 kHz switching

rate when the internal negative voltage generator

is used (pin 13 = GND). The rate at which the

PE42521 can be switched is only limited to the

switching time (Table 1) if an external negative

supply is provided (pin 13 = VssEXT).

Switching frequency describes the time duration

between switching events. Switching time is the

time duration between the point the control signal

reaches 50% of the final value and the point the

output signal reaches within 10% or 90% of its

target value.

CTRL

RFC-RF1

RFC-RF2

off

Moisture Sensitivity Level

The Moisture Sensitivity Level rating for the

PE42521 in the 16-lead 3x3 mm QFN package is

MSL3.

Optional External Vss Control (VssEXT)

For proper operation, the VssEXT control pin must

be grounded or tied to the Vss voltage specified in

Table 3. When the VssEXT control pin is grounded,

FETs in the switch are biased with an internal

negative voltage generator. For applications that

require the lowest possible spur performance,

VssEXT can be applied externally to bypass the

internal negative voltage generator.

Spurious Performance

The typical spurious performance of the PE42521

is -152 dBm when VssEXT = 0V (pin 13 = GND). If

further improvement is desired, the internal

negative voltage generator can be disabled by

setting VssEXT = -3.4V.

Table 4. Absolute Maximum Ratings

Parameter/Condition

Symbol

Min

Max

Unit

Supply voltage

VDD

-0.3

5.5

Digital input voltage (CTRL)

VCTRL

-0.3

3.6

RF input power, CW

(RFC-RFX)1

9 kHz ≤600 MHz

600 MHz ≤4 GHz

4 GHz ≤13 GHz

PIN-CW

Fig. 4

Fig. 5

dBm

Storage temperature range

TST

-65

+150

°C

ESD voltage HBM3

RF pins to GND

All pins

VESD,HBM

3000

1500

ESD voltage MM4, all pins

VESD,MM

200

LS input voltage

VLS

-0.3

3.6

ESD voltage CDM5, all pins

VESD,CDM

1000

RF input power into terminated

ports, CW (RFX)1

9 kHz ≤30 MHz

30 MHz ≤13 GHz

PIN,TERM

Fig. 4

dBm

RF input power, pulsed

(RFC-RFX)2

9 kHz ≤600 MHz

600 MHz ≤13 GHz

PIN-PULSED

Fig. 4

Fig. 5

dBm

Notes: 1. 100% duty cycle, all bands, 50Ω

Pulsed, 5% duty cycle of 4620

µs period, 50Ω

3. Human Body Model (MIL-STD 883 Method 3015)

4. Machine Model (JEDEC JESD22-A115)

5. Charged Device Model (JEDEC JESD22-C101)

Exceeding absolute maximum ratings may cause

permanent damage. Operation should be

restricted to the limits in the Operating Ranges

table. Operation between operating range

maximum and absolute maximum for extended

periods may reduce reliability.

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