M24128-DF datasheet(24/40 Pages) STMICROELECTRONICS

24 / 40 page

DC and AC parameters

M24128-BW M24128-BR M24128-BF M24128-DF

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DocID16892 Rev 23

Table 10. Input parameters

Symbol

Parameter(1)

1. Characterized only, not tested in production.

Test condition

Min.

Max.

Unit

CIN

Input capacitance (SDA)

CIN

Input capacitance (other pins)

Input impedance (E2, E1, E0, WC)(2)

2. E2, E1, E0 input impedance when the memory is selected (after a Start condition).

VIN < 0.3 VCC

VIN > 0.7 VCC

500

Table 11. Cycling performance by groups of four bytes

Symbol

Parameter

Test condition(1)

1. Cycling performance for products identified by process letter K.

Max.

Unit

Ncycle

Write cycle

endurance(2)

2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N,

4*N+1, 4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by

characterization and qualification.

≤ 25 °C, VCC(min) < VCC <

VCC(max)

4,000,000

Write cycle(3)

3. A Write cycle is executed when either a Page Write, a Byte Write, a Write Identification Page or

a Lock Identification Page instruction is decoded. When using the Byte Write, the Page Write or

the Write Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and

Write cycling.

TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000

Table 12. Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention(1)

1. For products identified by process letter K. The data retention behavior is checked in

production. The 200-year limit is defined from characterization and qualification results.

TA = 55 °C

200

Year

Table 13. DC characteristics (M24128-BW, device grade 6)

Symbol

Parameter

Test conditions (in addition to those

in Table 6)

Min.

Max.

Unit

ILI

Input leakage current

(SCL, SDA, E2, E1,

E0)

VIN = VSS or VCC, device in Standby

mode

-± 2

µA

ILO

Output leakage

current

SDA in Hi-Z, external voltage applied

on SDA: VSS or VCC

-± 2

µA

ICC

Supply current (Read)

VCC = 2.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

-1(1)

VCC = 5.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

-2

2.5 V < VCC < 5.5 V, fc = 1 MHz(2)

(rise/fall time < 50 ns)

-2.5

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