M24128-DF datasheet(26/40 Pages) STMICROELECTRONICS

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DC and AC parameters

M24128-BW M24128-BR M24128-BF M24128-DF

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DocID16892 Rev 23

Table 14. DC characteristics (M24128-BR, device grade 6)

Symbol

Parameter

Test conditions(1) (in addition

to those in Table 7)

1. If the application uses the voltage range R device with 2.5 V

< Vcc < 5.5 V and -40 °C < TA <

+85 °C, please refer to Table 13 instead of this table.

Min.

Max.

Unit

ILI

Input leakage current

(E0, E1, E2, SCL, SDA)

VIN = VSS or VCC, device in

Standby mode

-± 2

µA

ILO

Output leakage current

SDA in Hi-Z, external voltage

applied on SDA: VSS or VCC

-± 2

µA

ICC

Supply current (Read)

VCC = 1.8 V, fc= 400 kHz

0.8

fc= 1 MHz(2)

2. Only for devices identified with process letter K.

-2.5

ICC0

Supply current (Write)

During tW, VCC = 1.81.7 V < VCC

< 2.5 V

-2(3)(4)

3. Characterized value, not tested in production.

4. 3 mA for previous devices identified by process letter A.

ICC1

Standby supply current

Device not selected(5),

VIN = VSS or VCC, VCC = 1.8 V

5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or

after the completion of the internal write cycle tW (tW is triggered by the correct decoding of a

Write instruction).

-1

µA

VIL

Input low voltage

(SCL, SDA, WC)

1.8 V

≤ VCC < 2.5 V

–0.45

0.25 VCC

VIH

Input high voltage

(SCL, SDA)

1.8 V

≤ VCC < 2.5 V

0.75 VCC

6.5

Input high voltage

(WC, E2, E1, E0)

1.8 V

≤ VCC < 2.5 V

0.75 VCC VCC+0.6

VOL

Output low voltage

IOL = 1 mA, VCC = 1.8 V(6)

6. IOL = 0.7 mA for devices identified by process letters G or S.

-0.2

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