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BAV70 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BAV70 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 15 page  BAV70_SER_7 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 — 27 November 2007 5 of 15 NXP Semiconductors BAV70 series High-speed switching diodes 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr =20ns. Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VF forward voltage [1] IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA --1 V IF = 150 mA - - 1.25 V IR reverse current VR = 25 V --30 nA VR = 80 V - - 0.5 µA VR =25V; Tj = 150 °C --30 µA VR =80V; Tj = 150 °C - - 100 µA Cd diode capacitance VR = 0 V; f = 1 MHz - - 1.5 pF trr reverse recovery time [2] --4 ns VFR forward recovery voltage [3] - - 1.75 V |
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