BAV70 datasheet(13/15 Pages) NXP

13 / 15 page

BAV70_SER_7

Product data sheet

Rev. 07 — 27 November 2007

13 of 15

NXP Semiconductors

BAV70 series

High-speed switching diodes

12. Revision history

Table 10.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BAV70_SER_7

20071127

Product data sheet

BAV70_6

BAV70S_2

BAV70T_3

BAV70W_6

Modiﬁcations:

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Type number BAV70M added

• Section 1.1 “General description”: amended

• Table 1 “Product overview”: added

• Table 2 “Quick reference data”: added

• Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VRRM maximum

value from 85 V to 100 V

• Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VR maximum value

from 75 V to 100 V

• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of

IR condition VR from 75 V to 80 V for Tj =25 °C

• Table 8 “Characteristics”: for BAV70, BAV70S and BAV70W change of IR maximum value

from 2.5

µA to 0.5 µA for T

j =25 °C

• Table 8 “Characteristics”: for BAV70T change of IR maximum value from 2.0 µA to 0.5 µA

for Tj =25 °C

• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of

IR maximum value from 60 µA to 30 µA for IR condition VR =25V; Tj = 150 °C

• Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of

IR condition VR from 75 V to 80 V for Tj = 150 °C

• Section 8 “Test information”: added

• Section 10 “Packing information”: added

• Section 11 “Soldering”: added

• Section 13 “Legal information”: updated

BAV70_6

20020403

Product speciﬁcation

BAV70_5

BAV70S_2

19971021

Product speciﬁcation

BAV70S_1

BAV70T_3

20040204

Product speciﬁcation

BAV70T_2

BAV70W_6

20020405

Product speciﬁcation

BAV70W_5

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