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PIC16 Datasheet(PDF) 334 Page - Microchip Technology |
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PIC16 Datasheet(HTML) 334 Page - Microchip Technology |
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334 / 418 page ![]() PIC16(L)F1508/9 DS40001609C-page 334 2011-2013 Microchip Technology Inc. TABLE 29-5: MEMORY PROGRAMMING SPECIFICATIONS Standard Operating Conditions (unless otherwise stated) Param. No. Sym. Characteristic Min. Typ† Max. Units Conditions Program Memory Programming Specifications D110 VIHH Voltage on MCLR/VPP pin 8.0 — 9.0 V (Note 2) D111 IDDP Supply Current during Programming —— 10 mA D112 VBE VDD for Bulk Erase 2.7 — VDDMAX V D113 VPEW VDD for Write or Row Erase VDDMIN —VDDMAX V D114 IPPPGM Current on MCLR/VPP during Erase/Write —1.0 — mA D115 IDDPGM Current on VDD during Erase/Write —5.0 — mA Program Flash Memory D121 EP Cell Endurance 10K — — E/W -40 C TA +85C (Note 1) D122 VPRW VDD for Read/Write VDDMIN —VDDMAX V D123 TIW Self-timed Write Cycle Time — 2 2.5 ms D124 TRETD Characteristic Retention — 40 — Year Provided no other specifications are violated D125 EHEFC High-Endurance Flash Cell 100K — — E/W 0 C TA +60°C, lower byte last 128 addresses † Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: Self-write and Block Erase. 2: Required only if single-supply programming is disabled. |
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