FG896 datasheet(36/162 Pages) MICROSEMI

36 / 162 page

ProASIC3E DC and Switching Characteristics

2-22

Revision 13

The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The

reliability data below is based on a 3.3 V, 36 mA I/O setting, which is the worst case for this type of

analysis.

For example, at 100°C, the short current condition would have to be sustained for more than six months

to cause a reliability concern. The I/O design does not contain any short circuit protection, but such

protection would only be needed in extremely prolonged stress conditions.

Table 2-21 • I/O Short Currents IOSH/IOSL

Drive Strength

IOSH (mA)*

IOSL (mA)*

3.3 V LVTTL / 3.3 V LVCMOS

4 mA

8 mA

12 mA

103

109

16 mA

132

127

24 mA

268

181

3.3 V LVCMOS Wide Range

100 µA

Same as regular

3.3 V LVCMOS

Same as regular

3.3 V LVCMOS

2.5 V LVCMOS

4 mA

8 mA

12 mA

16 mA

24 mA

169

124

1.8 V LVCMOS

2 mA

4 mA

6 mA

8 mA

12 mA

16 mA

1.5 V LVCMOS

2 mA

4 mA

6 mA

8 mA

12 mA

Notes:

1. TJ = 100°C

2. Applicable to 3.3 V LVCMOS Wide Range. IOSL/IOSH dependent on the I/O buffer drive strength

selected for wide range applications. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide

range as specified in the JESD8b specification.

Table 2-22 • Duration of Short Circuit Event Before Failure

Temperature

Time before Failure

–40°C

> 20 years

0°C

> 20 years

25°C

> 20 years

70°C

5 years

85°C

2 years

100°C

6 months

FG896 Datasheet(PDF) 36 Page - Microsemi Corporation

FG896 Datasheet(HTML) 36 Page - Microsemi Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL