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ATC800B Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # ATC800B
Description  RoHS Compliant / Lead-Free
PDF  5 Pages
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Manufacturer  ETC2 [List of Unclassifed Manufacturers]
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ATC800B Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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ATC 800 B Series
NPO Ceramic, High RF Power
Ultra-Low ESR
Multilayer Capacitors
ATC’s 800 B Series offers superb performance in demanding high RF
power applications requiring consistent and reliable operation. The
combination of highly conductive metal electrode systems, optimized
case geometries, and proprietary dielectrics, yields the lowest ESR.
ATC’s new NPO low loss rugged dielectrics are designed to provide
superior heat transfer in high RF power applications. Ultra-low ESR
and superior thermal performance insure that the 800 B Series prod-
ucts are your best choice for high RF power applications from VHF
through microwave frequencies.
Typical applications: VHF / UHF / HDTV Broadcast Transmitters, Wire-
less Communications, Public Safety Radio, Avionics, Telecom, WiMAX,
Microwave Communication Systems and Satellite Systems.
Typical circuit applications: High RF Power Filter Networks, Combiners,
Couplers, Matching Networks, Output Coupling, Antenna Coupling, and
DC Blocking and Bypassing.
ENVIRONMENTAL TESTS
ATC 800 B Series Capacitors are designed and manufactured to meet and
exceed the requirements of EIA-198, MIL-PRF-55681 and MIL-PRF-123.
THERMAL SHOCK:
MIL-STD-202, Method 107, Condition A
MOISTURE RESISTANCE:
MIL-STD-202, Method 106
LOW VOLTAGE HUMIDITY:
MIL-STD-202, Method 103, Condition A, with 1.5 Volts DC applied
while subjected to an environment of 85°C with 85% relative
humidity for 240 hours min.
LIFE TEST:
MIL-STD-202, Method 108, for 2000 hours, at 125°C
200% WVDC applied
• Case B Size
(.110" x .110")
• Rugged, reliable
NPO dielectric
• Case optimized for
highest self resonant
frequency
• Capacitance Range
0.1 pF to 1000 pF
• Lowest ESR
• Capable of highest
RF Power
• RoHS Compliant / Lead-Free
ELECTRICAL AND MECHANICAL
SPECIFICATIONS
QUALITY FACTOR (Q):
2000 @ 1 MHz
TEMPERATURE COEFFICIENT OF CAPACITANCE (TCC):
0 ±30 PPM/°C (-55°C to +125°C)
INSULATION RESISTANCE (IR):
0.1 pF to 1000 pF:
105 Megohms min. @ +25°C at rated WVDC
104 Megohms min. @ +125°C at rated WVDC
WORKING VOLTAGE (WVDC):
See Capacitance Values Table, page 2
DIELECTRIC WITHSTANDING VOLTAGE (DWV):
Case B: 250% of rated WVDC for 5 secs
RETRACE: Less than ±(0.02% or 0.02 pF), whichever is greater
AGING EFFECTS: None
PIEZOELECTRIC EFFECTS: None
(No capacitance variation with voltage or pressure)
CAPACITANCE DRIFT: ±(0.02% or 0.02 pF), whichever is greater
OPERATING TEMPERATURE RANGE:
From -55°C to +125°C (No derating of working voltage)
TERMINATION STYLES: RoHS Compliant and Solder Plate
See Mechanical Configurations, page 3
TERMINAL STRENGTH: Terminations for chips withstand a pull of
5 lbs. min., 15 lbs. typical, for 5 seconds in direction perpendicular
to the termination surface of the capacitor. Test per MIL-STD-202,
method 211.
ISO 9001
REGISTERED
COMPANY
ATC # 001-1033 Rev. I, 6/13


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