IRGP4263PBF datasheet(2/11 Pages) IRF

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IRGP4263PbF/IRGP4263-EPbF

www.irf.com

July 12, 2013

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

650

—

VGE = 0V, IC = 100µA 

V(BR)CES/ Temperature Coeff. of Breakdown Voltage

—

505

—

mV/°C VGE = 0V, IC = 1mA (25°C-175°C)

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.7

2.1

IC = 48A, VGE = 15V, TJ = 25°C

—

2.1

—

IC = 48A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

5.5

—

7.7

VCE = VGE, IC = 1.4mA

VGE(th)/TJ Threshold Voltage Temperature Coeff.

—

-23

—

mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C)

gfe

Forward Transconductance

—

VCE = 50V, IC = 48A, PW = 20µs

ICES

Collector-to-Emitter Leakage Current

—

1.0

µA

VGE = 0V, VCE = 650V

—

700

—

VGE = 0V, VCE = 650V, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max Units

Conditions

Total Gate Charge (turn-on)

—

100

150

IC = 48A

Qge

Gate-to-Emitter Charge (turn-on)

—

VGE = 15V

Qgc

Gate-to-Collector Charge (turn-on)

—

VCC = 600V

Eon

Turn-On Switching Loss

—

1.7

2.6

IC = 48A, VCC = 400V, VGE=15V

RG = 10, L = 210µH, TJ = 25°C

Energy losses include tail & diode

reverse recovery 

Eoff

Turn-Off Switching Loss

1.0

1.9

Etotal

Total Switching Loss

2.7

4.5

td(on)

Turn-On delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

140

160

Fall time

—

Eon

Turn-On Switching Loss

—

2.9

—

IC = 48A, VCC = 400V, VGE=15V

RG = 10, L = 210µH, TJ = 175°C

Energy losses include tail & diode

reverse recovery 

Eoff

Turn-Off Switching Loss

—

1.4

—

Etotal

Total Switching Loss

4.3

td(on)

Turn-On delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

145

—

Fall time

—

Cies

Input Capacitance

—

3000

—

VGE = 0V

Coes

Output Capacitance

—

150

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1.0Mhz

RBSOA

Reverse Bias Safe Operating Area

TJ = 175°C, IC = 192A

FULL SQUARE

VCC = 520V, Vp ≤ 650V

Rg = 10

, VGE = +20V to 0V

SCSOA

Short Circuit Safe Operating Area

5.5

—

TJ = 150°C,VCC = 400V, Vp ≤ 650V

Rg = 10

, VGE = +15V to 0V

µs

Notes:



VCC = 80% (VCES), VGE = 20V, L = 50µH, RG = 10.



R is measured at TJ of approximately 90°C.



Refer to AN-1086 for guidelines for measuring V(BR)CES safely.



Maximum limits are based on statistical sample size characterization.



Pulse width limited by max. junction temperature.



Values influenced by parasitic L and C in measurement.

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