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IRGP4263PBF Datasheet(PDF) 3 Page - International Rectifier

Part # IRGP4263PBF
Description  Insulated Gate Bipolar Transistor
PDF  11 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRGP4263PBF Datasheet(HTML) 3 Page - International Rectifier

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IRGP4263PbF/IRGP4263-EPbF
3
www.irf.com
© 2013 International Rectifier
July 12, 2013
25
50
75
100
125
150
175
TC (°C)
0
50
100
150
200
250
300
350
0.1
1
10
100
f , Frequency ( kHz )
10
30
50
70
90
110
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 150W
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I
Square Wave:
V
CC
Diode as specified
10
100
1000
VCE (V)
1
10
100
1000
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 5- Reverse Bias SOA
T
J
= 175°C; VGE = 20V
1
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
0.01
0.1
1
10
100
1000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY V CE(on)
100µsec
DC
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Fig. 4 - Forward SOA
T
C
= 25°C, TJ
175°C, V
GE
=15V
25
50
75
100
125
150
175
TC (°C)
0
25
50
75
100



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