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ELMOS Semiconductor AG

Data Sheet

QM-No.: 25DS0091E.00

PRELIMINARY INFORMATION - JUL 28, 2011

This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.

INTEGRATED CIRCUIT FOR PIR SMART SENSOR

E910.97

Mains Powered Motion Sensor Light Application Circuit_____________

C3

VDD

VSS

V1

R6

CDS1

R5

C1

R2

D2

R3

R1

S1

LAMP

Live

Neutral

On

Auto

Off

RE1A

N.O.

D1

RV1

RV2

RV3

Z1

VREL

U1

910.97

Q1

Designator

Typ. Value

Description

Note

U1

Smart Motion Sensor

Smart Sensor with E910.97

R1

1M

Discharge resistor

R2

100R

Transient protection resistor

Wire wound

R3

10k

Current limiting resistor

R5

47k

Current limiting resistor

R6

330k

Voltage divider

D1

1N4148

Fly back protection diode

D2

DB104S

Diode bridge

Z1

ZD47

47V Zener diode

Choose according to RE1 voltage

Q1

2N7002

Switching transistor

CdS1

Light dependent resistor

RV1

2.2M

OEN Voltage Adjust (Dark level)

RV2

220k

Sensitivity adjustment

Select in conjunction with R6 and RV3

RV3

220k

On Time adjustment

Select in conjunction with R6 and RV2

V1

S10275VAC

Transorb, for high voltage spike

protection

C1

330n/230VAC Voltage dropper capacitor

C2

10µF

Supply voltage storage

Voltage rating dependant on RE1 voltage

C3

1µF

Decoupling capacitor

Ceramic, close to supply pins of device

C4

10µF

Sensor supply storage

Regulator compensation capacitor

RE1

47V

N.O. REL

High coil voltage, less drive current

S1

3 position Mains switch

Table 2: Component Values for Motion Sensor Light